HYE18P32161AC Datasheet, PDF (28/33 Pages) Infineon Technologies AG – 32M Asynchronous/Page CellularRAM

HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Electrical Characteristics
Table 12 Operating Characteristics
Parameter
Symbol
Operating Current
• Async read/write random @t_RCmin I_DD1
• Async read/write random @t_RC = 1 µs I_DD1L
• Async Page read
I_DD1P
Stand-By Current : L-part (32M)
I_DD2
Stand-By Current : Std. part (32M)
Deep Power Down Current (32M)
I_DD3
1) The specification assumes the output disabled.
70
Min. Max.
–
20
–
5
–
15
–
90
–
120
–
25
85
Min. Max.
–
17
–
5
–
12
–
90
–
120
–
25
Unit
mA
µA
µA
µA
Test
Condition
V_in = V_DD or
V_SS, Chip
enabled,
I_out = 0
V_in = V_DD or
V_SS, Chip
deselected,
(Full array)
V_in = V_DD or
V_SS
Notes
1)
–
–
3.3
Output Test Conditions
DUT
Figure 17 Output Test Circuit
Please refer to section Section 2.7.
3.4
Pin Capacitances
Table 13 Pin Capacitances
Pin
A20 - A0, CS1, OE, WE, UB, LB, ZZ
DQ15 - DQ0
VDDQ
5.4kOhm
5.4kOhm
VSSQ
30pF
VSSQ
Test point
Limit Values
Unit
Min.
Max.
–
5.0
pF
–
6.0
pF
Condition
T_A = +25 °C
freq. = 1 MHz
V_pin = 0 V
(sampled, not 100%
tested)
Data Sheet
28
V2.0, 2003-12-16