HYE18P32161AC Datasheet, PDF (25/33 Pages) Infineon Technologies AG – 32M Asynchronous/Page CellularRAM

HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Functional Description
Table 7 Timing Parameters - Asynchronous Write
Parameter
Symbol
70
Min. Max.
Write cycle time
Address set-up time to start of write
Address valid to end of write
Write recovery time
Chip select pulse width low time
Chip select to end of write
Byte control valid to end of write
Write pulse width
Write pulse pause
CS high time when toggling
UB, LB high time when toggling
Write to output disable
End of write to output enable
Write data setup time
Write data hold time
CS1 high setup time to ZZ low
ZZ active setup time to start of write
ZZ active hold time from end of write
t_WC
t_AS
t_AW
t_WR
t_CSL
t_CW
t_BW
t_WP
t_WPH
t_CPH
t_BPH
t_WHZ
t_OW
t_DW
t_DH
t_CDZZ
t_ZZWE
t_WEZZ
70
–
0
–
70
–
0
–
–
10
70
–
70
–
40
–
10
–
10
–
10
–
–
8
3
–
20
–
0
–
5
–
10
500
0
–
85
Min. Max.
85
–
0
–
85
–
0
–
–
10
85
–
85
–
45
–
15
–
15
–
15
–
–
10
3
–
20
–
0
–
5
–
10
500
0
–
Unit
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Data Sheet
25
V2.0, 2003-12-16