HYE18P32161AC Datasheet, PDF (19/33 Pages) Infineon Technologies AG – 32M Asynchronous/Page CellularRAM

HYE18P32161AC(-/L)70/85
32M Asynch/Page CellularRAM
Functional Description
2.3.5 Page Mode Enable/Disable
In asynchronous operation mode, the user has the option to enable page mode to toggle A0 - A3 in random way
at higher cycle rate (20 ns vs. 70 ns) to lower access times of subsequent reads within 16-word boundary. Write
operation is not supported in the manner of page mode access. In synchronous mode, this option has no effect.
The max. page length is 16 words, so which A0 - A3 is regarded as page-mode address. If the access needs to
cross the boundary of 16-word (any difference in A20 - A4), then it should start over new random access cycle,
which is the same as asynchronous read operation.
Please note that as soon as page mode is enabled the CS1 low time restriction applies. This means that the CS1
signal must not kept low longer than t_CSL = 10 µs. Please refer to Figure 11.
Data Sheet
19
V2.0, 2003-12-16