TC1167 Datasheet, PDF (125/127 Pages) Infineon Technologies AG – 32-Bit Single-Chip Microcontroller

TC1167
Electrical Parameters
5.4.3 Flash Memory Parameters
The data retention time of the TC1167’s Flash memory (i.e. the time after which stored
data can still be retrieved) depends on the number of times the Flash memory has been
erased and programmed.
Table 26 Flash Parameters
Parameter
Symbol
Min.
Values
Typ. Max.
Unit Note /
Test Condition
Program Flash
Retention Time,
Physical Sector¹⁾²⁾
t_RET CC 20
––
years Max. 1000
erase/program
cycles
Program Flash
Retention Time
Logical Sector¹⁾²⁾
t_RETL CC 20
––
years Max. 100
erase/program
cycles
Data Flash
Endurance
per 32 KB Sector
N_E CC 30 000 – –
cycles Max. data
retention time
5 years
Data Flash Endurance, N_E8 CC 120000 – –
EEPROM Emulation
(4 × 16 KB)
cycles Max. data
retention time
5 years
Programming Time
per Page³⁾
t_PR CC –
–5
ms –
Program Flash Erase t_ERP CC –
Time per 256-KB Sector
–5
s
f_CPU = 133 MHz
Data Flash Erase Time t_ERD CC –
for 2 x 32-KB Sector
– 2.5
s
f_CPU = 133 MHz
Wake-up time
t_WU CC –
– 4000/f_CPU μs
–
+180
1) Storage and inactive time included.
2) At average weighted junction temperature T_j = 100^oC, or
the retention time at average weighted temperature of T_j = 110^oC is minimum 10 years, or
the retention time at average weighted temperature of T_j = 150^oC is minimum 0.7 years.
3) In case the Program Verify feature detects weak bits, these bits will be programmed once more. The
reprogramming takes additional 5 ms.
Data Sheet
120
V1.3, 2009-10