8413S12 Datasheet, PDF (7/33 Pages) Integrated Device Technology – Selectable external crystal or differential

8413S12 DATA SHEET
Table 4C. LVCMOS/LVTTL DC Characteristics, V_DD = V_{DDO_F} = 3.3V ± 5%; or
V_DD = 3.3V ± 5%, V_{DDO_G} = V_{DDO_QREF} = 3.3V ± 5% or 2.5V ± 5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
V_IH
Input High Voltage
2.2
V_IL
Input Low Voltage
-0.3
FSEL_A[0:1], FSEL_B[0:1],
FSEL_C[0:1], FSEL_D[0:1],
Input
FSEL_E[0:1]
I_IH
High
Current ^{nMR, REF_SEL, PLL_SEL,}
OE_REF, OE_A, OE_B,
OE_C, OE_D, OE_E, OE_G
V_DD = V_IN = 3.465V
V_DD = V_IN = 3.465V
FSEL_A[0:1], FSEL_B[0:1],
Input
FSEL_C[0:1], FSEL_D[0:1],
FSEL_E[0:1]
V_DD = 3.465V, V_IN = 0V
I_IL
Low
Current ^{nMR, REF_SEL, PLL_SEL,}
OE_REF, OE_A, OE_B,
V_DD = 3.465V, V_IN = 0V
OE_C, OE_D, OE_E, OE_G
-10
-150
V_OH
Output High Voltage
V_OL
Output Low Voltage
V_{DDO_F} = V_{DDO_G,} V_{DDO_QREF} =
3.465V, I_OH = -12mA
2.6
V_{DDO_G,} V_{DDO_QREF} = 2.625V,
I_OH = -12mA
1.8
V_{DDO_F} = V_{DDO_G,} V_{DDO_QREF} =
3.465V or
V_{DDO_G,} V_{DDO_QREF} = 2.625V,
I_OH = 12mA
Typical
Maximum
V_DD + 0.3
0.8
Units
V
V
150
µA
10
uA
µA
uA
V
V
0.6
V
Table 4D. Differential DC Characteristics, V_DD = 3.3V ± 5%, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
Input
I_IH
High
CLK, nCLK
Current
V_DD = V_IN = 3.465V
Input
CLK
I_IL
Low
Current ^nCLK
V_DD = 3.465V, V_IN = 0V
V_DD = 3.465V, V_IN = 0V
-10
-150
V_PP
V_CMR
Peak-to-Peak Input Voltage; NOTE 1
Common Mode Input Voltage; NOTE 1, 2
0.15
0.5
NOTE 1: V_IL should not be less than -0.3V.
NOTE 2. Common mode voltage is defined as V_IH.
Typical Maximum Units
150
µA
µA
µA
1.3
V
V_DD – 0.85 V
Table 5. Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Test Conditions
NOTE: Characterized using an 18pF parallel resonant crystal.
Minimum Typical Maximum
Fundamental
25
50
7
Units
MHz

pF
REVISION D 1/27/15
7
HCSL/ LVCMOS CLOCK GENERATOR