7133LA70GB Datasheet, PDF (7/16 Pages) Integrated Device Technology – HIGH SPEED 2K X 16 DUAL-PORT SRAM

IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage⁽³⁾
7133X20
7143X20
Com'l Only
7133X25
7143X25
Com'l, Ind
& Military
7133X35
7143X35
Com'l, Ind
& Military
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
tRC
Read Cycle Time
20
____
25
____
35
____
ns
tAA
Address Access Time
____
20
____
25
____
35
ns
tACE
Chip Enable Access Time
____
20
____
25
____
35
ns
tAOE
Output Enable Access Time
____
12
____
15
____
20
ns
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time^(1,2)
tHZ
Output High-Z Time^(1,2)
tPU
Chip Enable to Power Up Time⁽²⁾
tPD
Chip Disable to Power Down Time⁽²⁾
0
____
0
____
0
____
ns
0
____
0
____
0
____
ns
____
12
____
15
____
20
ns
0
____
0
____
0
____
ns
____
20
____
50
____
50
ns
7133X45
7143X45
Com'l &
Military
7133X55
7143X55
Com'l, Ind
& Military
7133X70/90
7143X70/90
Com'l &
Military
2746 tbl 10a
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
tRC
Read Cycle Time
45
____
55
____
70/90
____
ns
tAA
Address Access Time
____
45
____
55
____
70/90 ns
tACE
Chip Enable Access Time
____
45
____
55
____
70/90 ns
tAOE
Output Enable Access Time
____
25
____
30
____
40/40 ns
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time^(1,2)
tHZ
Output High-Z Time^(1,2)
tPU
Chip Enable to Power Up Time⁽²⁾
tPD
Chip Disable to Power Down Time⁽²⁾
0
____
0
____
0/0
____
ns
0
____
5
____
5/5
____
ns
____
20
____
20
____
25/25 ns
0
____
0
____
0/0
____
ns
____
50
____
50
____
50/50 ns
NOTES:
1. Transition is measured 0mV fromLow or High-impedance voltage with load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. 'X' in part number indicates power rating (SA or LA).
2746 tbl 10b
6.742