90E36 Datasheet, PDF (68/79 Pages) Integrated Device Technology – Poly-Phase High-Performance Wide-Span Energy Metering IC

90E36
POLY-PHASE HIGH-PERFORMANCE WIDE-SPAN ENERGY METERING IC
7
ELECTRICAL SPECIFICATION
7.1 ELECTRICAL SPECIFICATION
Parameter
DC Power Supply Rejection Ratio (PSRR)
AC Power Supply Rejection Ratio (PSRR)
Active Energy Error (Dynamic Range 6000:1)
Differential Input Voltage
Analog Input Pin Absolute Voltage Range
Channel Input Impedance
Channel Sampling Frequency
Channel Sampling Bandwidth
Temperature Sensor Accuracy
Reference voltage
Reference voltage temperature coefficient
Current Detector threshold range
Current Detector threshold setting step/ resolution
Current Detector detection time (single-side)
Current Detector detection time (double-side)
Oscillator Frequency (f_{sys_clk})
AVDD
DVDD
VDD18
Normal mode operating current (I-Normal)
Normal mode operating current with DFT engine on
(I-Normal + DFT)
Idle mode operating current (I-Idle)
Detection mode operating current (I-Detection)
Partial Measurement mode operating current
(I-Measurement)
Slave mode (SPI) bit rate
Master mode (DMA) bit rate
Machine Model (MM)
Charged Device Model (CDM)
Human Body Model (HBM)
Latch Up
Latch Up
Min
Typ
Max
Unit
Accuracy
±0.1
%
±0.1
%
±0.1
%
ADC Channel
0.12
720
0.07
360 mVrms
0.04
180
GND-300
VDD-
1200
mV
120
80
KΩ
50
8
kHz
2
kHz
Temperature Sensor and Reference
1
°C
1.2
6
15
ppm/
°C
Current detectors
2
3
4
mVrms
0.096
mVrms
32
ms
17
ms
Crystal Oscillator
16.384
MHz
Power Supply
2.8
3.3
3.6
2.8
3.3
3.6
1.8
V
Operating Currents
25
mA
Test Condition/ Comments
VDD=3.3V±0.3V, I=5A, V=220V, CT 1000:1, sam-
pling resistor 4.8Ω
VDD=3.3V superimposes 400mVrms, I=5A, V=220V,
CT 1000:1, sampling resistor 4.8Ω
CT 1000:1, sampling resistor 4.8Ω
PGA=1
PGA=2
PGA=4
PGA=1
PGA=2
PGA=4
3.3 V, 25 °C
From -40 to 85 °C
3.3 V, 25 °C
3.3 V, 25 °C
The Accuracy of crystal or external clock is ±20 ppm,
10pF ~ 20pF crystal load capacitor integrated.
3.3 V, 25 °C
25.5
mA 3.3 V, 25 °C
2.2
10
180
250
100
140
µA 3.3 V, 25 °C
µA
Double-side detection (at 3.3 V, 25 °C)
Single-side detection (at 3.3 V, 25 °C)
6.8
mA 3.3 V, 25°C
SPI
100
1200k^{note 1 bps}
1800k
bps
ESD
400
V JESD22-A115
1000
V JESD22-C101
6000
V JESD22-A114
±100
mA JESD78A
5.4
V JESD78A
Electrical Specification
68
December 9, 2011