841N4830 Datasheet, PDF (4/28 Pages) Integrated Device Technology – Fourth generation FemtoClock

841N4830 DATA SHEET
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are
stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics
or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability.
Item
Supply Voltage, V_DD
Inputs, V_I
Outputs, V_O (LVCMOS, HCSL)
Rating
3.63V
-0.5V to V_DD + 0.5V
-0.5V to V_DDO + 0.5V
Outputs, I_O (LVPECL)
Continuos Current
Surge Current
Package Thermal Impedance, _JA
Storage Temperature, T_STG
50mA
100mA
37.7C/W (0 mps)
-65C to 150C
DC Electrical Characteristics
Table 4A. Power Supply DC Characteristics, V_DD = V_{DD_OSC} = 3.0V to 3.6V, V_DDO = V_{DDO_QA3} = V_{DDO_QB} = V_{DDO_REF} =
2.7V to 3.6V, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
Typical
Maximum Units
V_DD,
V_{DD_OSC}
Core Supply Voltage
V_DDA
Analog Supply Voltage
V_DDO,
V_DDOx
Output Supply Voltage
I_EE
Power Supply Current
I_DDA
Analog Supply Current
Included in I_EE
3.0
3.3
V_DD – 0.32
3.3
2.7
3.3
3.6
V
V_DD
V
3.6
V
170
mA
32
mA
V_DDOx denotes V_{DDO_REF,} V_{DDO_QA3} and V_{DDO_QB}.
Table 4B. LVCMOS/LVTTL DC Characteristics, V_DD = 3.0V to 3.6V, V_{DDO_QA3} = V_{DDO_QB} = 2.7V to 3.6V, T_A = -40°C to 85°C
Symbol Parameter
Test Conditions
Minimum
Typical
Maximum Units
V_IH
Input High Voltage
2
V_IL
Input Low Voltage
-0.3
CLK_SEL,
DIV2_QB
I_IH
Input
High Current
nOEA, nOEB,
nOE_REF,
PLL_BYPASS
V_DD = V_IN = 3.6V
V_DD = V_IN = 3.6V
V_DD + 0.3
V
0.8
V
5
µA
150
µA
CLK_SEL,
DIV2_QB
V_DD = 3.6V, V_IN = 0V
-150
µA
I_IL
Input
Low Current
nOEA, nOEB,
nOE_REF,
V_DD = 3.6V, V_IN = 0V
-5
µA
PLL_BYPASS
FEMTOCLOCK® NG CRYSTAL-TO-HCSL FREQUENCY SYNTHESIZER
4
Rev E 7/1/15