HY5S7B6LF-H Datasheet, PDF (8/51 Pages) Hynix Semiconductor – 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

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512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6LF(P) Series
CAPACITANCE (TA= 25 ^oC, f=1MHz)
Parameter
Input capacitance
Data input/output capacitance
Pin
CLK
A0~A12, BA0, BA1, CKE, CS, RAS,
CAS, WE, UDQM, LDQM
DQ0 ~ DQ15
Symbol
CI1
CI2
CI/O
H/S
Min Max
Unit
2
4.0
pF
2
4.0
pF
2
4.5
pF
DC CHARACTERRISTICS I (TA= -25 to 85^oC)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
ILI
ILO
VOH
VOL
Min
-1
-1
VDDQ-0.2
-
Note :
1. VIN = 0 to 1.8V. All other pins are not tested under VIN=0V.
2. DOUT is disabled. VOUT= 0 to 1.95V.
3. IOUT = - 0.1mA
4. IOUT = + 0.1mA
Max
1
1
-
0.2
Unit
uA
uA
V
V
Note
1
2
3
4
Rev 1.0 / Jan. 2007
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