HY5S7B6LF-H Datasheet, PDF (31/51 Pages) Hynix Semiconductor – 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

11
512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6LF(P) Series
READ to WRITE
Data from READ burst must be completed or truncated before a subsequent WRITE command can be issued. If trun-
cation is necessary, the BURST TERMINATE command must be used, as shown in next fig.
CLK
Command
READ
BURST
WRITE
Address
BA, Col
n
BA, Col
b
CL =2
DQ
Don Don'
DIb0 DIb1 DIb2 DIb3
CL =3
Don Don'
DIb0 DIb1 DIb2 DIb3
DQ
1) DO n = Data Out from column n; DI b = Data In to column b
Don't Care
Read to Write
Note :
1. Same bank, same ROW address: When the write command is executed at the same ROW address of the same bank as the
preceding read command, the write command can be performed after an interval of no less than 1 clock. However, DQM must be
set High so that the output buffer becomes High-Z before data input.
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be executed; it is
necessary to separate the two commands with a precharge command and a bank active command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no less than 1 cycle, provided
that the other bank is in the bank active state. However, DQM must be set High so that the output buffer becomes High-Z before
data input.
Rev 1.0 / Jan. 2007
31