HY5S7B6LF-H Datasheet, PDF (34/51 Pages) Hynix Semiconductor – 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

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512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6LF(P) Series
WRITE to WRITE
Data for any WRITE burst may be concatenated with or truncated with a subsequent WRITE command. In either case,
a continuous flow of input data, can be maintained. The new WRITE command can be issued on any positive edge of
the clock following the previous WRITE command. The first data-in element from the new burst is applied after either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated. The
new WRITE command should be issued X cycles after the first WRITE command, where X equals the number of
desired data-in element.
CLK
Command
Address
DQ
WRITE
WRITE
BA, Col
b
BA, Col
n
DIb0 DIb1 DIb2 DIb3 DIn0 DIn1 DIn2 DIn3
DM
CL = 2 or 3
Concatenated Write Bursts
Don't Care
CLK
Command
Address
DQ
DM
W RITE
W RITE
W RITE
W RITE
W RITE
NOP
BA, Col
b
BA, Col
x
BA, Col
n
BA, Col
a
BA, Col
g
DIb DIb'
DIx DIx’ ^DIn DIn’
DIa DIa’ DIg DIg’
Random Write Cycles
CL = 2 or 3
Don't Care
Rev 1.0 / Jan. 2007
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