HY5S7B6LF-H Datasheet, PDF (29/51 Pages) Hynix Semiconductor – 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

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512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6LF(P) Series
CLK
Command
READ
READ
Address
DQ
BA, Col
n
CL =2
Don
CL =3
BA, Col
b
Dob
DQ
Don
Dob
Don't Care
1) Don (or b): Data out from column n
2) BA, Col n (b) = Bank A, Column n (b)
3) Burst Length = 4 : 3 subseqnent elements of Data Out appear in the programmed order following Do n (b)
Non-Consective Read Bursts
CLK
Command
READ
READ
READ
READ
Address
DQ
DQ
BA, Col
n
BA, Col
x
BA, Col
b
BA, Col
g
CL =2
Don Don' Dox Dox' Dob Dob' Dog Dog'
CL =3
Don Don' Dox Dox' Dob Dob' Dog Dog’
1) Don, etc: Data out from column n, etc
n', x', etc : Data Out elements, accoding to the programmd burst order
2) BA, Col n = Bank A, Column n
3) Burst Length = 1, 2, 4, 8 or full page in cases shown
4) Read are to active row in any banks
Randum Read Bursts
Don't Care
Rev 1.0 / Jan. 2007
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