HY5S7B6LF-H Datasheet, PDF (18/51 Pages) Hynix Semiconductor – 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

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512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6LF(P) Series
CURRENT STATE TRUTH TABLE (Sheet 2 of 4)
Current
State
Command
CS RAS CAS
WE
BA0/
BA1
Amax-A0
Description
Action
Read
HX X X X
X
Device Deselect Continue the Burst
LL L L
OP CODE
Mode Register Set ILLEGAL
LL L H X
X
Auto or Self Refresh ILLEGAL
L L H L BA
X
Precharge
Termination Burst: Start
the Precharge
Write
L L H H BA
L H L L BA
Row Add.
Col Add.
A10
Bank Activate
Write/WriteAP
ILLEGAL
Termination Burst: Start
Write(optional AP)
L H L H BA
Col Add.
A10
Read/ReadAP
Termination Burst: Start
Read(optional AP)
LHH H X
X
No Operation
Continue the Burst
HX X X X
X
Device Deselect Continue the Burst
LL L L
OP CODE
Mode Register Set ILLEGAL
LL L H X
X
Auto or Self Refresh ILLEGAL
L L H L BA
X
Precharge
Read with _{L L H H BA}
Row Add. Bank Activate
Auto
Precharge ^{L H L L BA Col Add. A10 Write/WriteAP}
L H L H BA Col Add. A10 Read/ReadAP
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
LHH H X
X
No Operation
Continue the Burst
HX X X X
X
Device Deselect Continue the Burst
LL L L
OP CODE
Mode Register Set ILLEGAL
LL L H X
X
Auto or Self Refresh ILLEGAL
L L H L BA
X
Precharge
Write with
Auto
L L H H BA
Row Add. Bank Activate
Precharge _{L H L L BA Col Add. A10 Write/WriteAP}
ILLEGAL
ILLEGAL
ILLEGAL
L H L H BA Col Add. A10 Read/ReadAP
ILLEGAL
LHH H X
X
No Operation
Continue the Burst
HX X X X
X
Device Deselect Continue the Burst
Notes
13,14
13
10
4
8
8,9
13,14
13
4,12
4,12
12
12
13,14
13
4,12
4,12
12
12
Rev 1.0 / Jan. 2007
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