HY5S7B6LF-H Datasheet, PDF (17/51 Pages) Hynix Semiconductor – 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O

11
512Mbit (32Mx16bit) Mobile SDR Memory
HY5S7B6LF(P) Series
CURRENT STATE TRUTH TABLE (Sheet 1 of 4)
Current
State
Idle
Row
Active
Read
Command
CS RAS CAS WE
BA0/
BA1
Amax-A0
LL L L
OP CODE
LL LH X
X
L L H L BA
X
L L H H BA
Row Add.
L H L L BA
L H L H BA
LHHH X
Col Add.
A10
Col Add.
A10
X
HX X X X
X
LL L L
LL LH
LLHL
LL HH
LH L L
LH L H
LHHH
HX X X
LL L L
LL LH
OP CODE
X
X
BA
X
BA
Row Add.
BA
Col Add.
A10
BA
Col Add.
A10
X
X
X
X
OP CODE
X
X
L L H L BA
X
L L H H BA
L H L L BA
L H L H BA
LHHH X
Row Add.
Col Add.
A10
Col Add.
A10
X
Description
Action
Notes
Mode Register Set Set the Mode Register
14
Auto or Self Refresh Start Auto or Self Refresh 5
Precharge
No Operation
Bank Activate
Activate the specified
bank and row
Write/WriteAP
ILLEGAL
4
Read/ReadAP
ILLEGAL
4
No Operation
No Operation
Device Deselect
No Operation or Power
Down
Mode Register Set ILLEGAL
Auto or Self Refresh ILLEGAL
Precharge
Precharge
Bank Activate
ILLEGAL
Write/WriteAP
Start Write : optional
AP(A10=H)
Read/ReadAP
Start Read : optional
AP(A10=H)
No Operation
No Operation
Device Deselect
No Operation
Mode Register Set ILLEGAL
Auto or Self Refresh ILLEGAL
Precharge
Termination Burst: Start
the Precharge
Bank Activate
ILLEGAL
Write/WriteAP
Termination Burst: Start
Write(optional AP)
Read/ReadAP
Termination Burst: Start
Read(optional AP)
No Operation
Continue the Burst
3
3
13,14
13
7
4
6
6
13,14
13
4
8,9
8
Rev 1.0 / Jan. 2007
17