GM82C765B Datasheet, PDF (7/36 Pages) Hynix Semiconductor – FLOPPY DISK SUBSYSTEM CONTROLLER

GM82C765B
2.3 AC Timing Specifications
TA = 0°C (32°F) to 70°C (158°F) : VCC = +5V ±10% : CL =100 pF
SYMBOL
PARAMETER
t _CY
Clock Period
t _PH
Clock Active (High or Low)
t_R
Clock Rise Time (Vin 0.8 to 2.0)
t_F
Clock Fall Time (Vin 2.0 to 0.8)
t _AR
A0, CS , DACK Set Up Time to RD Low
t _RA
A0, CS , DACK Hold Time from RD High
t _RR
RD Width
t _RD
Data Access Time from RD Low
t _DF
DB To Float Delay from RD High
t _AW
A0, CS , DACK , LDCR , LDOR , Set Up Time to WR Low
t _WA
A0, CS , DACK , LDCR , LDOR , Hold Time from WR High
t _WW
WR Width
t _DW
Data Set Up Time to WR High
t _WD
Data Hold Time from WR High
t _RI
IRQ Reset Delay Time from RD High
t _WI
IRQ Reset Delay Time from WR High
t _MCY
DMA Cycle Time
t _AM
DMA Reset Delay Time from DACK Low
t _MA
DACK Delay Time from DMA High
t _AA
DACK Width
t _TC
TC Width
t _RST
Reset Width-TTL Driven CLK1
t _SRST
Reset Width-Software Reset
t _RDD
RDD Active Time Low
t _WDD
WD Write Data Width Low
t _DST
DIRC Hold & Set Up to STEP Low
t _STU
DSX Hold Time from STEP Low
t _STP
STEP Active Time Low
t _SC
STEP Cycle Time
(continued on next page)
MIN
MAX UNITS
60
nS
25
nS
5 nS
5 nS
0
nS
0
nS
90
nS
90 nS
10
65 nS
0
nS
0
nS
60
nS
80
nS
0
nS
0 1MCY + 150nS
0 1MCY + 150nS
52
MCY
140 nS
0
nS
90
nS
60
nS
250
nS
5
MCY
40
nS
1/2 (TYP)
MCY
4
MCY
20
MCY
24
MCY
132
MCY
7