HY29DS162 Datasheet, PDF (47/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

HY29DS162/HY29DS163
ORDERING INFORMATION
Hynix products are available in several speeds, packages and operating temperature ranges. The
ordering part number is formed by combining a number of fields, as indicated below. Refer to the ‘Valid
Combinations’ table, which lists the configurations that are planned to be supported in volume. Please
contact your local Hynix representative or distributor to confirm current availability of specific configura-
tions and to determine if additional configurations have been released.
HY29DS16x X X - X X X
SPECIAL INSTRUCTIONS
TEMPERATURE RANGE
Blank = Commercial ( 0 to +70 °C)
I = Industrial (-40 to +85 °C)
SPEED OPTION
12 = 120 ns
13 = 130 ns
PACKAGE TYPE
T = 48-Pin Thin Small Outline Package (TSOP)
F = 48-Ball Fine-Pitch Ball Grid Array (FBGA), 8 x 9 mm
BOOT BLOCK LOCATION
T = Top Boot Block Option
B = Bottom Boot Block Option
DEVICE NUMBER
HY29DS162 = 16 Megabit (2M x 8/1M x 16) CMOS 1.8 Volt-Only
Sector Erase Flash Memory with 2Mb/14Mb Bank Split
HY29DS163 = 16 Megabit (2M x 8/1M x 16) CMOS 1.8 Volt-Only
Sector Erase Flash Memory with 4Mb/12Mb Bank Split
VALID COMBINATIONS
Temperature
Commercial
Industrial
120 ns
F-12
F-12I
FBGA
Package and Speed
130 ns
F-13
F-13I
120 ns
T-12
T-12I
TSOP
130 ns
T-13
T-13I
Notes:
1. The complete part number is formed by appending the suffix shown in the table to the Device Number. For example, the
part number for a 130 ns, Industrial temperature range 2Mb/14Mb bank-split device in the TSOP package with the top
boot block option is HY29DS162TT-13I.
2. Please contact your local Hynix representative or distributor for current product availability.
r1.3/Apr 01
47