HY29DS162 Datasheet, PDF (35/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JEDEC Std
Description
t_ELFL CE# to BYTE# Switching Low
t_ELFH CE# to BYTE# Switching High
t_FLQZ BYTE# Switching Low to Output High-Z
t_FHQV BYTE# Switching High to Output Active
HY29DS162/HY29DS163
Speed Option
- 12
- 13
Unit
Max
10
ns
Max
10
ns
Max
60
60
ns
Min
120
130
ns
CE#
OE#
BYTE#
BYTE#
switching
from word to
DQ[14:0]
t_ELFL
byte mode
DQ[15]/A-1
Data Output DQ[14:0]
Data Output DQ[7:0]
Output DQ[15]
t_FLQZ
Address Input A-1
BYTE#
switching
from byte to
word mode
BYTE#
DQ[14:0]
DQ[15]/A-1
t_ELFH
Data Output DQ[7:0]
Address Input A-1
t_FHQV
Data Output DQ[14:0]
Data Output DQ[15]
Figure 17. BYTE# Timings for Read Operations
CE#
WE#
Falling edge of the last WE# signal
BYTE#
t_SET (t_AS)
t_HOLD (t_AH)
Note: Refer to the Program/Erase Operations table for t and t specifications.
AS
AH
Figure 18. BYTE# Timings for Write Operations
r1.3/Apr 01
35