HY29DS162 Datasheet, PDF (31/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

DC CHARACTERISTICS
Zero Power Flash
20
HY29DS162/HY29DS163
15
10
5
0
0
500
1000
Note: Addresses are switching at 1 MHz.
1500
2000
Time in ns
2500
3000
3500
4000
Figure 11. I_CC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
8
6
2.2 V
4
1.8 V
2
0
1
Note: T = 25 °C.
r1.3/Apr 01
2
3
4
5
Frequency in MHz
Figure 12. Typical I_CC1 Current vs. Frequency
6
31