HY29DS162 Datasheet, PDF (12/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

HY29DS162/HY29DS163
The device enters the CE# controlled Deep
Standby mode when the CE# and RESET# pins
are both held at V_CC ± 0.3V. Note that this is a
more restricted voltage range than V_IH. If both CE#
and RESET# are held at V_IH , but not within V_CC ±
0.3V, the device will be in the Normal Standby
mode, but the standby current will be greater.
The device enters the RESET# controlled Deep
Standby mode when the RESET# pin is held at
V_SS ± 0.3V. If RESET# is held at V_IL but not within
V_SS ± 0.3V, the standby current will be greater.
See RESET# section for additional information on
the reset operation.
The device requires standard access time (t_CE) for
read access when the device is in any of the
standby modes, before it is ready to read data. If
the device is deselected during erasure or pro-
gramming, it continues to draw active current until
the operation is completed.
Sleep Mode
The Sleep mode automatically minimizes device
power consumption. This mode is automatically
entered when addresses remain stable for t_ACC +
30 ns (typical) and is independent of the state of
the CE#, WE#, and OE# control signals. Stan-
dard address access timings provide new data
when addresses are changed. While in Sleep
mode, output data is latched and always available
to the system.
NOTE: Sleep mode is entered only when the device is
in Read mode. It is not entered if the device is executing
an automatic algorithm, if it is in erase suspend mode,
or during receipt of a command sequence.
Output Disable Operation
When the OE# input is at V_IH, output data from the
device is disabled and the data bus pins are placed
in the high impedance state.
Reset Operation
The RESET# pin provides a hardware method of
resetting the device to reading array data. When
the RESET# pin is driven low for the minimum
specified period, the device immediately termi-
nates any operation in progress, tri-states the data
bus pins, and ignores all read/write commands for
the duration of the RESET# pulse. The device also
resets the internal state machine to reading array
data. If an operation was interrupted by the as-
12
sertion of RESET#, it should be reinitiated once
the device is ready to accept another command
sequence to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse as described in the Standby Operation sec-
tion above.
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains Low (busy) until
the internal reset operation is complete, which re-
quires a time of t_READY (during Automatic Algo-
rithms). The system can thus monitor RY/BY# to
determine when the reset operation completes,
and can perform a read or write operation t_RB after
RY/BY# goes High. If RESET# is asserted when
a program or erase operation is not executing (RY/
BY# pin is High), the reset operation is completed
within a time of t_RP. In this case, the host can per-
form a read or write operation t_RH after the RE-
SET# pin returns High .
The RESET# pin may be tied to the system reset
signal. Thus, a system reset would also reset the
device, enabling the system to read the boot-up
firmware from the Flash memory.
Sector Group Protect Operation
The hardware sector group protection feature dis-
ables both program and erase operations in any
combination of sector groups. A sector group con-
sists of a single sector or a group of adjacent sec-
tors, as specified in Tables 7 and 8. This function
can be implemented either in-system or by using
programming equipment. It requires a high volt-
age (V_ID) on the RESET# pin and uses standard
microprocessor bus cycle timing to implement
sector protection. The flow chart in Figure 1 illus-
trates the algorithm.
The HY29DS16x is shipped with all sector groups
unprotected. It is possible to determine whether
a sector is protected or unprotected. See the Elec-
tronic ID Mode section for details.
Sector Unprotect Operation
The hardware sector unprotection feature re-en-
ables both program and erase operations in pre-
viously protected sector groups. This function can
be implemented either in-system or by using pro-
gramming equipment. Note that to unprotect any
sector, all unprotected sector groups must first be
protected prior to the first sector unprotect write
r1.3/Apr 01