HY29DS162 Datasheet, PDF (33/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

AC CHARACTERISTICS
HY29DS162/HY29DS163
Read Operations
Parameter
JEDEC Std
Description
t_AVAV
t_RC Read Cycle Time ¹
t_AVQV
t_ACC Address to Output Delay
t_ELQV
t_EHQZ
t_GLQV
t_GHQZ
t_AXQX
t_CE Chip Enable to Output Delay
t_DF Chip Enable to Output High Z ¹
t_OE Output Enable to Output Delay
t_DF Output Enable to Output High Z ¹
t_OEH
Output Enable
Hold Time ¹
Read
Toggle and
Data# Polling
t_OH
Output Hold Time from Addresses, CE#
or OE#, Whichever Occurs First ¹
Test Setup
CE# = V_IL
OE# = V_IL
OE# = V_IL
CE# = V_IL
Min
Max
Max
Max
Max
Max
Min
Min
Min
Notes:
1. Not 100% tested.
Speed Option
- 12
- 13
120
130
120
130
120
130
50
50
50
50
50
50
0
20
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Addresses
CE#
OE#
WE#
Outputs
t_RC
Addresses Stable
t_ACC
t_OE
t_OEH
t_DF
t_CE
t_OH
Output Valid
RESET#
RY/BY#
0V
Figure 15. Read Operation Timings
r1.3/Apr 01
33