HY29DS162 Datasheet, PDF (24/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

HY29DS162/HY29DS163
Table 14. CFI Mode: Device Geometry Data Values
Word Mode
Description
Address
Data
Device size (2^N bytes)
27
0015
Flash device interface code (02 = asynchronous x8/x16)
28
0002
29
0000
Maximum number of bytes in multi-byte write (not
supported)
2A
0000
2B
0000
Number of erase block regions
2C
0002
Erase block region 1 information
[2E, 2D] = # of blocks in region - 1
[30, 2F] = size in multiples of 256-bytes
2D
0007
2E
0000
2F
0020
30
0000
Erase block region 2 information
31
001E
32
0000
33
0000
34
0001
Byte Mode
Address
Data
4E
15
50
02
52
00
54
00
56
00
58
02
5A
07
5C
00
5E
20
60
00
62
1E
64
00
66
00
68
01
Table 15. CFI Mode: Vendor-Specific Extended Query Data Values
Word Mode
Description
Address
Data
Query-unique ASCII string "PRI"
40
0050
41
0052
42
0049
Major version number, ASCII
43
0031
Minor version number, ASCII
44
Address sensitive unlock (0 = required, 1 = not required)
45
Erase suspend (2 = to read and write)
46
Sector protect (N = # of sectors/group)
47
Temporary sector unprotect (1 = supported)
48
Sector protect/unprotect scheme (4 = Am29LV800A method)
49
Simultaneous R/W operation
4A
(xx = number of sectors in Bank 2: HY29DS162 = 1C, HY29DS163 = 18)
Burst mode type (0 = not supported)
4B
Page mode type (0 = not supported)
4C
ACC Supply minimum (8.5V)
4D
0030
0000
0002
0001
0001
0004
001C or
0018
0000
0000
0085
ACC Supply maximum (9.5V)
4E
0095
Top/bottom boot version (BB = Bottom Boot, TB = Top Boot)
4F
0002 (BB)
0003 (TB)
Byte Mode
Address
Data
80
50
82
52
84
49
86
31
88
30
8A
00
8C
02
8E
01
90
01
92
04
94
1C or
18
96
00
98
00
9A
85
9C
95
9E
02 (BB)
03 (TB)
24
r1.3/Apr 01