HY29DS162 Datasheet, PDF (11/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

The HY29DS16x is automatically set for reading
array data after device power-up and after a hard-
ware reset to ensure that no spurious alteration of
the memory content occurs during the power tran-
sition. No command is necessary in this mode to
obtain array data, and both banks of the device
remain enabled for read accesses until the com-
mand register contents are altered.
This device features the capability of reading data
from one bank of the memory while a program or
erase operation is in progress in the other bank.
If the host reads from an address within an eras-
ing or erase-suspended sector, or from a bank
where a programming operation is taking place,
the device outputs status data instead of array data
(see Write Operation Status section). After com-
pleting an Automatic Program or Automatic Erase
algorithm within a bank, that bank automatically
returns to the read array data mode.
When the host issues an Erase Suspend com-
mand, the bank specified in the command enters
the Erase- Suspended Read mode. While in that
mode, the host can read data from, or program
data into, any sector in that bank except the
sector(s) being erased. After completing a pro-
gramming operation in the Erase Suspend mode,
the system may once again read array data with
the same exception noted above.
The host must issue a hardware reset or the soft-
ware reset command to return a sector to the read
array data mode if DQ[5] goes high during a pro-
gram or erase cycle, or to return the device to the
read array data mode while it is in the Electronic
ID mode.
Write Operation
Certain operations, including programming data
and erasing sectors of memory, require the host
to write a command or command sequence to the
HY29DS16x. Writes to the device are performed
by placing the byte or word address on the device’s
address inputs while the data to be written is input
on DQ[15:0] (BYTE# = High) or DQ[7:0] (BYTE#
= Low). The host system must drive the CE# and
WE# pins Low and drive OE# High for a valid write
operation to take place. All addresses are latched
on the falling edge of WE# or CE#, whichever
happens later. All data is latched on the rising
edge of WE# or CE#, whichever happens first.
HY29DS162/HY29DS163
The “Device Commands” section of this data sheet
provides details on the specific device commands
implemented in the HY29DS16x.
Accelerated Program Operation
This device offers improved performance for pro-
gramming operations through the ‘Accelerate
(ACC)’ function. This is one of two functions pro-
vided by the WP#/ACC pin and is intended prima-
rily to allow faster manufacturing throughput at the
factory.
If V_HH is applied to this input, the device enters the
Unlock Bypass mode, temporarily unprotects any
protected sectors, and uses the higher voltage on
the pin to reduce the time required for program
operations. The host system would then use the
two-cycle program command sequence as re-
quired by the Unlock Bypass mode. Removing
V_HH from the pin returns the device to normal op-
eration.
This pin must not be at V_HH for operations other
than accelerated programming, or device damage
may result. Leaving the pin floating or uncon-
nected may result in inconsistent device opera-
tion.
Write Protect Function
The Write Protect function provides a hardware
method of protecting certain boot sectors without
using V_ID. This is the second function provided by
the WP#/ACC pin.
Placing this pin at V_IL disables program and erase
operations in two of the eight 8 Kbyte (4 Kword)
boot sectors. The affected sectors are sectors S0
and S1 in a bottom-boot device, or S37 and S38
in a top-boot device. If the pin is placed at V_IH, the
protection state of those two sectors reverts to
whether they were last set to be protected or un-
protected using the method described in the Sec-
tor Group Protection and Unprotection sections.
Standby Operation
When the system is not reading or writing to the
device, it can place the device in the Standby
mode. In this mode, current consumption is greatly
reduced, and the data bus outputs are placed in
the high impedance state, independent of the OE#
input. The Standby mode can invoked using two
methods.
r1.3/Apr 01
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