HY29DS162 Datasheet, PDF (23/48 Pages) Hynix Semiconductor – 16 Megabit (2M x 8/1M x 16) Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory

Table 12. CFI Mode: Identification Data Values
Description
Query-unique ASCII string "QRY"
Primary vendor command set and control interface ID
code
Address for primary algorithm extended query table
Alternate vendor command set and control interface ID
code (none)
Address for secondary algorithm extended query table
(none)
HY29DS162/HY29DS163
Word Mode
Address
Data
10
0051
11
0052
12
0059
13
0002
14
0000
15
0040
16
0000
17
0000
18
0000
19
0000
1A
0000
Byte Mode
Address
Data
20
51
22
52
24
59
26
02
28
00
2A
40
2C
00
2E
00
30
00
32
00
34
00
Table 13. CFI Mode: System Interface Data Values
Word Mode
Description
Address
Data
V_CC supply, minimum 1.8V)
V_CC supply, maximum 2.2V)
V_PP supply, minimum (none)
V_PP supply, maximum (none)
Typical timeout for single word/byte write (2^N µs)
1B
0018
1C
0022
1D
0000
1E
0000
1F
0004
Typical timeout for maximum size buffer write (2^N µs)
20
0000
Typical timeout for individual block erase (2^N ms)
21
000A
Typical timeout for full chip erase (2^N ms)
22
000F
Maximum timeout for single word/byte write (2^N x Typ)
23
0005
Maximum timeout for maximum size buffer write (2^N x Typ)
24
0000
Maximum timeout for individual block erase (2^N x Typ)
25
0004
Maximum timeout for full chip erase (not supported)
26
0000
Byte Mode
Address
Data
36
18
38
22
3A
00
3C
00
3E
04
40
00
42
0A
44
0F
46
05
48
00
4A
04
4C
00
r1.3/Apr 01
23