K20P144M120SF3_1210 Datasheet, PDF (36/86 Pages) Freescale Semiconductor, Inc – K20 Sub-Family

Peripheral operating requirements and behaviors
Table 21. Flash command timing specifications (continued)
Symbol Description
16-bit write to FlexRAM execution time:
t_eewr16b64k
t_eewr16b128k
t_eewr16b256k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
Min.
Typ.
Max.
Unit
—
400
1700
μs
—
450
1800
μs
—
525
2000
μs
t_eewr32bers 32-bit write to erased FlexRAM location
execution time
32-bit write to FlexRAM execution time:
t_eewr32b64k
t_eewr32b128k
t_eewr32b256k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
180
275
μs
—
475
1850
μs
—
525
2000
μs
—
600
2200
μs
Notes
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol
I_{DD_PGM}
I_{DD_ERS}
Description
Average current
adder during high
voltage flash
programming
operation
Average current
adder during high
voltage flash erase
operation
Min.
—
—
Typ.
3.5
1.5
Max.
7.5
4.0
Unit
mA
mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol Description
Min.
Typ.¹
Program Flash
t_nvmretp10k
t_nvmretp1k
n_nvmcycp
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Cycling endurance
5
20
10 K
Data Flash
50
100
50 K
t_nvmretd10k Data retention after up to 10 K cycles
t_nvmretd1k Data retention after up to 1 K cycles
5
50
20
100
Table continues on the next page...
Max.
—
—
—
—
—
Unit
years
years
cycles
years
years
Notes
2
K20 Sub-Family Data Sheet, Rev. 4, 10/2012.
36
Freescale Semiconductor, Inc.