K20P144M120SF3_1210 Datasheet, PDF (35/86 Pages) Freescale Semiconductor, Inc – K20 Sub-Family

Peripheral operating requirements and behaviors
Table 21. Flash command timing specifications (continued)
Symbol
t_rd1sec4k
t_pgmchk
t_rdrsrc
t_pgm8
t_ersblk128k
t_ersblk256k
Description
Read 1s Section execution time (4 KB flash)
Program Check execution time
Read Resource execution time
Program Phrase execution time
Erase Flash Block execution time
• 128 KB data flash
• 256 KB program flash
Min.
—
—
—
—
—
—
Typ.
—
—
—
70
110
220
Max.
100
80
40
150
925
1850
Unit
Notes
μs
1
μs
1
μs
1
μs
2
ms
ms
t_ersscr
t_pgmsec4k
t_rd1all
t_rdonce
t_pgmonce
t_ersall
t_vfykey
t_swapx01
t_swapx02
t_swapx04
t_swapx08
Erase Flash Sector execution time
Program Section execution time (4KB flash)
Read 1s All Blocks execution time
Read Once execution time
Program Once execution time
Erase All Blocks execution time
Verify Backdoor Access Key execution time
Swap Control execution time
• control code 0x01
• control code 0x02
• control code 0x04
• control code 0x08
—
15
115
ms
2
—
20
—
ms
—
—
1.0
ms
—
—
30
μs
1
—
70
—
μs
—
650
5600
ms
2
—
—
30
μs
1
—
200
—
μs
—
70
150
μs
—
70
150
μs
—
—
30
μs
Program Partition for EEPROM execution time
t_pgmpart64k
t_pgmpart256k
• 64 KB FlexNVM
• 256 KB FlexNVM
—
235
—
ms
—
240
—
ms
Set FlexRAM Function execution time:
t_setramff
t_setram64k
t_setram128k
t_setram256k
• Control Code 0xFF
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
205
—
μs
—
1.6
2.5
ms
—
2.7
3.8
ms
—
4.8
6.2
ms
t_eewr8bers Byte-write to erased FlexRAM location execution
—
140
225
μs
3
time
Byte-write to FlexRAM execution time:
t_eewr8b64k
t_eewr8b128k
t_eewr8b256k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
400
1700
μs
—
450
1800
μs
—
525
2000
μs
t_eewr16bers 16-bit write to erased FlexRAM location
execution time
—
140
225
μs
Table continues on the next page...
K20 Sub-Family Data Sheet, Rev. 4, 10/2012.
Freescale Semiconductor, Inc.
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