S9S08SL8F1CTJ Datasheet, PDF (350/356 Pages) Freescale Semiconductor, Inc – provides the functional version of the on-chip modules

Appendix A Electrical Characteristics
SS
(INPUT)
1
3
SCK
(CPOL = 0)
(INPUT)
2
5
4
SCK
(CPOL = 1)
(INPUT)
MISO
(OUTPUT)
MOSI
(INPUT)
5
4
SEE
NOTE
10
SLAVE
MSB OUT
8
6
7
MSB IN
11
BIT 6 . . . 1
BIT 6 . . . 1
9
SLAVE LSB OUT
LSB IN
NOTE:
1. Not defined but normally LSB of character just received
Figure A-17. SPI Slave Timing (CPHA = 1)
A.13 Flash and EEPROM Specifications
This section provides details about program/erase times and program-erase endurance for the Flash and
EEPROM memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-16. Flash Characteristics
Num
1
2
3
4
5
6
7
8
9
C
Characteristic
Symbol
— Supply voltage for program/erase
V_prog/erase
— Supply voltage for read operation
— Internal FCLK frequency¹
V_Read
f_FCLK
— Internal FCLK period (1/f_FCLK)
— Byte program time (random location)²
— Byte program time (burst mode)²
— Page erase time²
— Mass erase time²
Program/erase endurance³
C
T_L to T_H = –40°C to +125°C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
n_FLPE
Min
2.7
2.7
150
5
10,000
Typical
9
4
4000
20,000
—
100,000
Max
5.5
5.5
200
6.67
—
—
Unit
V
V
kHz
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
352
Freescale Semiconductor