K52P144M100SF2V2 Datasheet, PDF (32/80 Pages) Freescale Semiconductor, Inc – K52 Sub-Family

Peripheral operating requirements and behaviors
6.4.1.1 Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 20. NVM program/erase timing specifications
Symbol Description
t_hvpgm4 Longword Program high-voltage time
t_hversscr Sector Erase high-voltage time
t_hversblk256k Erase Block high-voltage time for 256 KB
Min.
—
—
—
Typ.
7.5
13
104
Max.
18
113
904
Unit
Notes
μs
ms
1
ms
1
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2 Flash timing specifications — commands
Table 21. Flash command timing specifications
Symbol
t_rd1blk256k
Description
Read 1s Block execution time
• 256 KB program/data flash
Min.
—
Typ.
—
Max.
1.7
Unit
Notes
ms
t_rd1sec2k Read 1s Section execution time (flash sector)
—
—
60
μs
1
t_pgmchk Program Check execution time
—
—
45
μs
1
t_rdrsrc Read Resource execution time
—
—
30
μs
1
t_pgm4 Program Longword execution time
—
65
145
μs
Erase Flash Block execution time
2
t_ersblk256k
• 256 KB program/data flash
—
122
985
ms
t_ersscr
Erase Flash Sector execution time
Program Section execution time
t_pgmsec512
t_pgmsec1k
t_pgmsec2k
• 512 B flash
• 1 KB flash
• 2 KB flash
t_rd1all
t_rdonce
t_pgmonce
t_ersall
t_vfykey
Read 1s All Blocks execution time
Read Once execution time
Program Once execution time
Erase All Blocks execution time
Verify Backdoor Access Key execution time
Swap Control execution time
t_swapx01
t_swapx02
t_swapx04
t_swapx08
• control code 0x01
• control code 0x02
• control code 0x04
• control code 0x08
—
14
114
ms
2
—
2.4
—
ms
—
4.7
—
ms
—
9.3
—
ms
—
—
1.8
ms
—
—
25
μs
1
—
65
—
μs
—
250
2000
ms
2
—
—
30
μs
1
—
200
—
μs
—
70
150
μs
—
70
150
μs
—
—
30
μs
K52 Sub-Family Data Sheet, Rev. 1, 6/2012.
32
Preliminary
Freescale Semiconductor, Inc.
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