K20P48M50SF0 Datasheet, PDF (32/60 Pages) Freescale Semiconductor, Inc – K20 Sub-Family

Peripheral operating requirements and behaviors
Table 19. Flash command timing specifications (continued)
Symbol Description
Min.
Typ.
Word-write to FlexRAM for EEPROM operation
t_eewr16bers Word-write to erased FlexRAM location
execution time
—
175
Word-write to FlexRAM execution time:
t_eewr16b8k
t_eewr16b16k
t_eewr16b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
340
—
385
—
475
Longword-write to FlexRAM for EEPROM operation
t_eewr32bers Longword-write to erased FlexRAM location
execution time
—
360
Longword-write to FlexRAM execution time:
t_eewr32b8k
t_eewr32b16k
t_eewr32b32k
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
545
—
630
—
810
Max.
260
1700
1800
2000
540
1950
2050
2250
Unit
μs
μs
μs
μs
μs
μs
μs
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
Notes
6.4.1.3 Flash high voltage current behaviors
Table 20. Flash high voltage current behaviors
Symbol Description
Min.
Typ.
Max.
Unit
I_{DD_PGM} Average current adder during high voltage
—
flash programming operation
2.5
6.0
mA
I_{DD_ERS} Average current adder during high voltage
—
flash erase operation
1.5
4.0
mA
6.4.1.4 Reliability specifications
Table 21. NVM reliability specifications
Symbol Description
t_nvmretp10k Data retention after up to 10 K cycles
t_nvmretp1k Data retention after up to 1 K cycles
n_nvmcycp Cycling endurance
t_nvmretd10k Data retention after up to 10 K cycles
Min.
Program Flash
5
20
10 K
Data Flash
5
Typ.¹
50
100
50 K
50
Max.
—
—
—
—
Table continues on the next page...
Unit
years
years
cycles
years
Notes
2
K20 Sub-Family Data Sheet, Rev. 4 5/2012.
32
Freescale Semiconductor, Inc.