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MC9S08AW60 Datasheet, PDF (284/320 Pages) Freescale Semiconductor, Inc – Microcontrollers
Appendix A Electrical Characteristics and Timing Specifications
Table A-7. DC Characteristics (continued)
Num C
Parameter
Symbol
Min
Typ1
Max
Unit
3 D Output high current — Max total IOH for all ports
5V IOHT
—
—
100
mA
3V
—
—
60
4 D Output low current — Max total IOL for all ports
5V IOLT
3V
—
—
100
mA
—
—
60
5 P Input high voltage; all digital inputs
6 P Input low voltage; all digital inputs
VIH 0.65 x VDD —
—
VIL
—
— 0.35 x VDD V
7 T Input hysteresis; all digital inputs
8 P Input leakage current; input only pins2
9 P High Impedance (off-state) leakage current2
10 P Internal pullup resistors3
11 P Internal pulldown resistors4
Vhys 0.06 x VDD
mV
|IIn|
—
0.01
1
µA
|IOZ|
—
0.01
1
µA
RPU
20
45
65
kΩ
RPD
20
45
65
kΩ
12 C Input Capacitance; all non-supply pins
CIn
—
—
8
pF
13 P POR rearm voltage
VPOR
0.9
1.4
2.0
V
14 D POR rearm time
tPOR
10
—
—
µs
15 P Low-voltage detection threshold — high range
VDD falling VLVDH
4.2
4.3
4.4
V
VDD rising
4.3
4.4
4.5
Low-voltage detection threshold — low range
16 P
VDD falling VLVDL
2.48 2.56 2.64
V
VDD rising
2.54 2.62
2.7
Low-voltage warning threshold — high range
17 P
VDD falling VLVWH
4.2
4.3
4.4
V
VDD rising
4.3
4.4
4.5
Low-voltage warning threshold — low range
18 P
VDD falling VLVWL
2.48 2.56 2.64
V
VDD rising
2.54 2.62
2.7
Low-voltage inhibit reset/recover hysteresis
19 P
5V Vhys
3V
—
100
—
mV
—
60
—
1 Typical values are based on characterization data at 25°C unless otherwise stated.
2 Measured with VIn = VDD or VSS.
3 Measured with VIn = VSS.
4 Measured with VIn = VDD.
MC9S08AW60 Data Sheet, Rev.1.0
284
Freescale Semiconductor