LM3S611 Datasheet, PDF (392/409 Pages) List of Unclassifed Manufacturers – Microcontroller

Electrical Characteristics
19.1.5
19.2
19.2.1
Flash Memory Characteristics
Table 19-5. Flash Memory Characteristics
Parameter Parameter Name
Min
PE_CYC
Number of guaranteed program/erase
cycles^a before failure
10,000
T_RET
Data retention at average operating
10
temperature of 85°C
T_PROG
Word program time
20
T_ERASE
Page erase time
20
T_ME
Mass erase time
200
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
Nom
-
-
-
-
-
Max
Unit
-
cycles
-
years
-
µs
-
ms
-
ms
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 19-1. Load Conditions
pin
C_L = 50 pF
GND
19.2.2 Clocks
Table 19-6. Phase Locked Loop (PLL) Characteristics
Parameter
Parameter Name
Min
Nom
Max
Unit
f_{REF_CRYSTAL}
f_{REF_EXT}
f_PLL
Crystal reference^a
3.579545
-
External clock reference^a 3.579545
-
PLL frequency^b
-
200
8.192
8.192
-
MHz
MHz
MHz
T_READY
PLL lock time
-
-
0.5
ms
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock
Configuration (RCC) register (see page 85).
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
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April 27, 2007
Preliminary