NT5SV64M4AT Datasheet, PDF (34/65 Pages) List of Unclassifed Manufacturers – 256Mb Synchronous DRAM

NT5SV64M4AT(L)
NT5SV32M8AT(L)
NT5SV16M16AT(L)
256Mb Synchronous DRAM
Absolute Maximum Ratings
Symbol
V_{D D}
V_DDQ
V_IN
V_OUT
T_A
T_STG
P_D
I_OUT
Parameter
Power Supply Voltage
Power Supply Voltage for Output
Input Voltage
Output Voltage
Operating Temperature (ambient)
Storage Temperature
Power Dissipation
Short Circuit Output Current
Rating
-0.3 to +4.6
-0.3 to +4.6
-0.3 to V _DD+0.3
-0.3 to V _DD+0.3
0 to +70
-55 to +125
1.0
50
Units
V
V
V
V
°C
°C
W
mA
Notes
1
1
1
1
1
1
1
1
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions (T_A = 0°C to 70°C)
Symbol
Parameter
V_DD
V_DDQ
V_{I H}
V_IL
Supply Voltage
Supply Voltage for Output
Input High Voltage
Input Low Voltage
1. All voltages referenced to V_SS and V_SSQ.
2. V_IH (max) = V_DD + 1.2V for pulse width ≤ 5ns.
3. V_IL (min) = V_SS - 1.2V for pulse width ≤ 5ns.
Min.
3.0
3.0
2.0
-0.3
Rating
Typ.
3.3
3.3
—
—
Max.
3.6
3.6
V_DD + 0.3
0.8
Units
V
V
V
V
Notes
1
1
1, 2
1, 3
Capacitance (T_A = 25°C, f = 1MHz, V_DD = 3.3V ± 0.3V)
Symbol
Parameter
Input Capacitance (A0-A12, BA0, BA1, CS, RAS, CAS , WE, CKE, DQM)
C_I
Input Capacitance (CK)
C_O
Output Capacitance (DQ0 - DQ15)
Min.
Typ
Max. Units Notes
2.5
3.0
3.8
pF
2.5
2.8
3.5
pF
4.0
4.5
6.5
pF
REV 1.0
May, 2001
34
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