NT5SV64M4AT Datasheet, PDF (13/65 Pages) List of Unclassifed Manufacturers – 256Mb Synchronous DRAM

NT5SV64M4AT(L)
NT5SV32M8AT(L)
NT5SV16M16AT(L)
256Mb Synchronous DRAM
Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK
DQM
COMMAND ^{READ A}
CAS latency = 2
t_CK2, DQs
CAS latency = 3
t_CK3, DQs
NOP
WRITE A
NOP
NOP
NOP
DIN A ₀
DIN A ₀
CL = 2: DQM needed to mask
first, second bit of READ data.
DIN A ₁
DIN A ₂
DIN A ₃
CL = 3: DQM needed to
mask first bit of READ data.
DIN A ₁
DIN A ₂
DIN A ₃
NOP
NOP
NOP
: DQM high for CAS latency = 2
: DQM high for CAS latency = 3
REV 1.0
May, 2001
13
© NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.