English
Language : 

NT5SV64M4AT Datasheet, PDF (22/65 Pages) List of Unclassifed Manufacturers – 256Mb Synchronous DRAM
NT5SV64M4AT(L)
NT5SV32M8AT(L)
NT5SV16M16AT(L)
256Mb Synchronous DRAM
Burst Read Followed by the Precharge Command
(Burst Length = 4, CAS Latency = 3)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK
COMMAND READ Ax0
NOP
CAS latency = 3
tCK2, DQs
NOP
NOP
NOP
Precharge A
NOP
tRP
NOP
*‡
DOUT Ax0 DOUT Ax1 DOUT Ax2 D O U T A x3
NOP
* Bank A can be reactivated at completion of tRP.
‡ tR P is a function of clock cycle and speed sort.
Burst Write Followed by the Precharge Command
(Burst Length = 2, CAS Latency = 2)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK
COMMAND NOP
CAS latency = 2
tCK2, DQs
Activate
Bank Ax
NOP
WRITE Ax0
NOP
NOP
tDPL‡
Precharge A
NOP
tRP‡
NOP
*
DIN Ax 0
DIN Ax1
*Bank can be reactivated at completion of t RP.
‡ tDPL and t RP are functions of clock cycle and speed sort.
See the Clock Frequency and Latency table.
REV 1.0
May, 2001
22
© NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.