M14D128168A Datasheet, PDF (15/59 Pages) Elite Semiconductor Memory Technology Inc. – Internal pipelined double-data-rate architecture; two data access per clock cycle

ESMT
M14D128168A (2M)
Operation Temperature Condition (TC) -40°C~95°C
ODT DC Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Rtt effective impedance value for 75Ω setting
Rtt1(eff)
60
75
90
Ω
EMRS(1) [A6, A2] = 0, 1
Rtt effective impedance value for 150Ω setting
Rtt2(eff)
120
150
180
Ω
EMRS(1) [A6, A2) = 1, 0
Rtt effective impedance value for 50Ω setting
Rtt3(eff)
40
50
60
Ω
EMRS(1) [A6, A2] = 1, 1
Deviation of VM with respect to V_DDQ /2
△VM
-6
-
+6
%
Note:
Measurement Definition for Rtt(eff) :
Rtt(eff) is determined by separately applying VIH(AC) and VIL(AC) to test pin, and then measuring current I(VIH(AC)) and
I(VIL(AC)) respectively.
Measurement Definition for △VM :
Measure voltage (VM) at test pin with no load.
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2014
Revision : 1.0
15/59