EN27SN1G08 Datasheet, PDF (9/44 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 Mx 8), 1.8 V NAND Flash Memory

Command Set
EN27SN1G08
Function
1st Cycle 2nd Cycle
Acceptable Command during Busy
Read
00h
30h
Read for Copy Back
00h
35h
Read ID
90h
-
Reset
FFh
-
O
Page Program
80h
10h
Copy-Back Program
85h
10h
Block Erase
Random Data Input ⁽¹⁾
Random Data Output ⁽¹⁾
60h
D0h
85h
-
05h
E0h
Read Status
Cache Program
70h
-
O
80h
15h
Cache Read
31h
-
Read Start for Last Page
Cache Read
3Fh
-
Note:
1. Random Data Input / Output can be executed in a page.
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V_SS
Temperature Under Bias
Storage Temperature
Short Circuit Current
Note:
Symbol
V_CC
V_IN
V_I/O
T_BIAS
T_STG
I_OS
Rating
-0.6 to +2.45
-0.6 to +2.45
-0.6 to VCC + 0.3 (< 2.45)
-40 to +125
-65 to +150
5
Unit
V
℃
℃
mA
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional
operation should be restricted to the conditions as detailed in the operational sections of this data
sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, T_A = – 40°C to 85°C)
Parameter
Symbol
Min.
Supply Voltage
Supply Voltage
V_CC
1.7
V_SS
0
Typ.
1.8
0
Max.
Unit
1.95
V
0
V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2011 Eon Silicon Solution, Inc., www.eonssi.com
Rev. B, Issue Date: 2012/05/21