EN27SN1G08 Datasheet, PDF (34/44 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 Mx 8), 1.8 V NAND Flash Memory

EN27SN1G08
Cache Program
Cache Program is an extension of Page Program, which is executed with 2,112 byte data registers, and
is available only within a block. Since the device has 1 page of cache memory, serial data input may be
executed while data stored in data register are programmed into memory cell.
After writing the first set of data up to 2,112 bytes into the selected cache registers, Cache Program
command (15h) instead of actual Page Program (10h) is inputted to make cache registers free and to
start internal program operation. To transfer data from cache registers to data registers, the device
remains in Busy state for a short period of time (t_CBSY) and has its cache registers ready for the next
data-input while the internal programming gets started with the data loaded into data registers. Read
Status command (70h) may be issued to find out when cache registers become ready by polling the
Cache-Busy status bit (I/O6). Pass/fail status of only the previous page is available upon the return to
Ready state. When the next set of data is inputted with the Cache Program command, t_CBSY is affected
by the progress of pending internal programming. The programming of the cache registers is initiated
only when the pending program cycle is finished and the data registers are available for the transfer of
data from cache registers. The status bit (I/O5) for internal Ready/Busy may be polled to identity the
completion of internal programming. If the system monitors the progress of programming only with R/B#,
the last page of the target programming sequence must be programmed with actual Page Program
command (10h).
Cache Program (available only within a block)
Note:
1. Since programming the last page does not employ caching, the program time has to be that of Page
Program. However, if the previous program cycle with the cache data has not finished, the actual
program cycle of the last page is initiated only after completion of the previous cycle, which can be
expressed as the following formula.
2. t_PROG = Program time for the last page + Program time for the (last-1)th page – (Program command
cycle time + Last page data loading time)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2011 Eon Silicon Solution, Inc., www.eonssi.com
Rev. B, Issue Date: 2012/05/21