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EN27SN1G08 Datasheet, PDF (12/44 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 Mx 8), 1.8 V NAND Flash Memory
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EN27SN1G08
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min.
Max.
Unit
CLE Setup Time
tCLS(1)
25
-
ns
CLE Hold Time
tCLH
10
-
ns
CE# Setup Time
tCS
35
-
ns
CE# Hold Time
tCH
10
-
ns
WE# Pulse Width
ALE Setup Time
tWP
25
tALS(1)
25
-
ns
-
ns
ALE Hold Time
Data Setup Time
tALH
10
tDS(1)
20
-
ns
-
ns
Data Hold Time
tDH
10
-
ns
Write Cycle Time
tWC
45
-
ns
WE# High Hold Time
ALE to Data Loading Time
tWH
tADL(2)
15
100
-
ns
-
ns
Note:
1. The transition of the corresponding control pins must occur only once while WE# is held low.
2. tADL is the time from the WE# rising edge of final address cycle to the WE# rising edge of first data
cycle.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2011 Eon Silicon Solution, Inc., www.eonssi.com
Rev. B, Issue Date: 2012/05/21
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