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EN27SN1G08 Datasheet, PDF (28/44 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 Mx 8), 1.8 V NAND Flash Memory
Block Erase Operation
EN27SN1G08
Read ID Operation
ID Definition Table
ID Access command = 90h
1st Cycle
2nd Cycle
(Maker Code) (Device Code)
C8hh
A1h
3rd Cycle
80h
4th Cycle
15h
5th Cycle
40h
1st Byte
2nd Byte
3rd Byte
4th Byte
5th Byte
Description
Maker Code
Device Code
Internal Chip Number, Cell Type, etc.
Page Size, Block Size, etc.
Plane Number, Plane Size, ECC Level
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2011 Eon Silicon Solution, Inc., www.eonssi.com
Rev. B, Issue Date: 2012/05/21