EN27SN1G08 Datasheet, PDF (11/44 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 Mx 8), 1.8 V NAND Flash Memory

CAPACITANCE
(T_A = 25°C, V_CC=1.8V, f =1.0MHz)
Item
Symbol
Test Condition
Input / Output Capacitance
C_I/O
V_IL = 0V
Input Capacitance
C_IN
V_IN = 0V
Note: Capacitance is periodically sampled and not 100% tested.
EN27SN1G08
Min.
-
-
Max.
Unit
10
pF
10
pF
MODE SELECTION
CLE ALE CE#
H
L
L
L
H
L
WE#
RE#
WP#
Mode
H
X
Command Input
Read Mode
H
X
Address Input (4 clock)
H
L
L
L
H
L
H
H
Command Input
Write Mode
H
H
Address Input (4 clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
X
X
X
X
H
X
During Read (Busy)
X
X
X
X
X
H
During Program (Busy)
X
X
X
X
X
H
During Erase (Busy)
X
X ⁽¹⁾
X
X
X
L
Write Protect
X
X
H
X
X
0V/V_CC(2) Stand-by
Note:
1. X can be V_IL or V_IH.
2. WP# should be biased to CMOS high or CMOS low for stand-by.
Program / Erase Characteristics
(T_A = – 40°C to 85°C, V_CC=1.7V~1.95V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Program Time
Dummy Busy Time for Cache
Program
t_PROG
-
t_CBSY
-
250
700
us
3
700
us
Number of Partial Program Cycles
in the Same Page
N_OP
-
-
4
Cycle
Block Erase Time
t_BERS
-
2
10
ms
Note:
1. Typical program time is defined as the time within which more than 50% of the whole pages are
programmed at 1.8V V_CC and 25°C temperature.
2. t_PROG is the average program time of all pages. Users should be noted that the program time
variation from page to page is possible.
3. Max. time of t_CBSY depends on timing between internal program completion and data in.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2011 Eon Silicon Solution, Inc., www.eonssi.com
Rev. B, Issue Date: 2012/05/21