EN27SN1G08 Datasheet, PDF (1/44 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 Mx 8), 1.8 V NAND Flash Memory

EN27SN1G08
1 Gigabit (128 Mx 8), 1.8 V NAND Flash Memory
EN27SN1G08
Features
• Voltage Supply: 1.7V ~ 1.95V
• Organization
- Memory Cell Array :
(128M + 4M) x 8bit for 1Gb
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64) bytes
- Block Erase : (128K + 4K) bytes
• Page Read Operation
- Page Size : (2K + 64) bytes
- Random Read : 25µs (Max.)
- Serial Access : 45ns (Min.)
• Memory Cell: 1bit/Memory Cell
• Fast Write Cycle Time
- Page Program Time : 250µs (Typ.)
- Block Erase Time : 2ms (Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power
Transitions
• Reliable CMOS Floating-Gate Technology
- ECC Requirement: 1 bit/528 bytes
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
• Command Register Operation
• Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
• NOP: 4 cycles
• Cache Program/Read Operation
• Copy-Back Operation
• EDO mode
• OTP Operation
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2011 Eon Silicon Solution, Inc., www.eonssi.com
Rev. B, Issue Date: 2012/05/21