EN27SN1G08 Datasheet, PDF (2/44 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 Mx 8), 1.8 V NAND Flash Memory

General Description
EN27SN1G08
The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V VCC Power
Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid
data while old data is erased.
The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32
series connected Flash cells. A program operation allows to write the 1056-Word page in typical 250us
and an erase operation can be performed in typical 2ms on a 128K-Byte for device block.
Data in the page mode can be read out at 45ns cycle time per Byte. The I/O pins serve as the ports for
address and command inputs as well as data input/output. The copy back function allows the
optimization of defective blocks management: when a page program operation fails the data can be
directly programmed in another page inside the same array section without the time consuming serial
data insertion phase. The cache program feature allows the data insertion in the cache register while
the data register is copied into the Flash array. This pipelined program operation improves the program
throughput when long files are written inside the memory. A cache read feature is also implemented.
This feature allows to dramatically improving the read throughput when consecutive pages have to be
streamed out. This device includes extra feature: Automatic Read at Power Up.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2011 Eon Silicon Solution, Inc., www.eonssi.com
Rev. B, Issue Date: 2012/05/21