EN27SN1G08 Datasheet, PDF (37/44 Pages) Eon Silicon Solution Inc. – 1 Gigabit (128 Mx 8), 1.8 V NAND Flash Memory

EN27SN1G08
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register,
followed by an address input of 00h. Four read cycles sequentially output the manufacturer code (C8h),
and the device code and 3rd, 4th and 5th cycle ID respectively. The command register remains in Read
ID mode until further commands are issued to it.
Read ID Operation
ID Definition Table
Maker Code Device Code
C8h
A1h
3^rd Cycle
80h
4^th Cycle
15h
5^th Cycle
40h
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is
in Busy State during random read, program or erase mode, the reset operation will abort these
operations. The contents of memory cells being altered are no longer valid, as the data will be partially
programmed or erased. The command register is cleared to wait for the next command, and the Status
Register is cleared to value C0h when WP# is high. If the device is already in reset state a new reset
command will be accepted by the command register. The R/B# pin changes to low for t_RST after the
Reset command is written. Refer to Figure below.
Reset Operation
Device Status Table
Operation mode
After Power-up
00h Command is latched
After Reset
Waiting for next command
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2011 Eon Silicon Solution, Inc., www.eonssi.com
Rev. B, Issue Date: 2012/05/21