EN25QH256 Datasheet, PDF (64/74 Pages) Eon Silicon Solution Inc. – 256 Megabit Serial Flash Memory with 4Kbyte Uniform Sector

Table 13. DC Characteristics
(T_a = - 40°C to 85°C; V_CC = 2.7-3.6V)
Symbol
Parameter
I_LI
I_LO
I_CC1
I_CC2
I_CC3
I_CC4
I_CC5
I_CC6
I_CC7
V_IL
V_IH
V_OL
V_OH
Input Leakage Current
Output Leakage Current
Standby Current
Deep Power-down Current
Operating Current (READ)
Operating Current (PP)
Operating Current (WRSR)
Operating Current (SE)
Operating Current (BE)
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Test Conditions
CS# = V_CC, V_IN = V_SS or V_CC
CS# = V_CC, VIN = V_SS or V_CC
CLK = 0.1 V_CC / 0.9 V_CC at
80MHz, DQ = open
CS# = V_CC
CS# = V_CC
CS# = V_CC
CS# = V_CC
I_OL = 1.6 mA
I_OH = –100 µA
EN25QH256
Min.
Max. Unit
-
±2
µA
-
±2
µA
-
20
µA
-
20
µA
-
20
mA
-
28
mA
-
18
mA
-
25
mA
-
25
mA
– 0.5
0.2 V_{CC V}
0.7V_CC V_CC+0.4 _V
-
0.4
V
V_CC-0.2
-
V
Table 14. AC Measurement Conditions
Symbol
Parameter
C_L
Load Capacitance
Input Rise and Fall Times
Input Pulse Voltages
Input Timing Reference Voltages
Output Timing Reference Voltages
Min.
Max.
20
5
0.2V_CC to 0.8V_CC
0.3V_CC to 0.7V_CC
V_CC / 2
Unit
pF
ns
V
V
V
Figure 34. AC Measurement I/O Waveform
This Data Sheet may be revised by subsequent versions
64
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. E, Issue Date: 2012/01/30
www.eonssi.com