EF4442 Datasheet, PDF (10/21 Pages) ATMEL Corporation – ARINC 429 Multi-channel Buffer Receiver (RTA) (N Channel, Silicon Gate)

Electrical
Characteristics
Maximum Ratings
Symbol
Rating
V_CC
Supply Voltage
V_IN
Input Voltage
T_C
Operating Temperature Range
T_stg
Storage Temperature Range
Pd
Power Dissipation
Tc = 125°C
Tc = 25°C
Tc = -55°C
Value
-0.3 to +7
-0.3 to +7
TL to TH
-55 to +125
-55 to +150
300
350
550
Unit
V_dc
V_dc
°C
°C
mW
mW
mW
This device contains circuitry to protect the inputs against damage due to high static
voltages or electric fields: however, it is advised that normal precautions be taken to
avoid application of any voltage higher than maximum rated voltages to this high imped-
ance circuit.
Table 5. Thermal Characteristics (at 25°C)
Package
Symbol
Parameter
DIL 28
LCCC 32
q_J-A
Thermal Resistance Junction-to-ambient
q_J-C
Thermal Resistance Junction-to-case
q_J-A
Thermal Resistance Junction-to-ambient
q_J-C
Thermal Resistance Junction-to-case
Value
50
10
45
9
Unit
°C/W
°C/W
°C/W
°C/W
Power Considerations
The average chip-junction temperature, TJ, in °C can be obtained from:
T_{J =} T_A + (P_D × q_JA)
(1)
T_A = Ambient Temperature,°C
q_JA = Package Thermal Resistance,
Junction-to-Ambient,°C/W
P_D = P_INT + P_I/O
P_INT = I_CC x V_CC,Watts – Chip Internal Power
P_I/O = Power Dissipation on Input and Output Pins – User Determined
For most applications P_I/O < P_INT and can be neglected.
An approximate relationship between P_D and T_J (if P_I/O is neglected) is:
P_D = K: (T_J + 273)
(2)
Solving equations (1) and (2) for K gives:
K = P_D × (T_A+ 273)+ q_JA × P_D2
(3)
where K is a constant pertaining to the particular part K can be determined from equa-
tion (3) by measuring P_D (at equilibrium) for a know T_A. Using this value of K, the values
of P_D and T_J can be obtained by solving equations (1) and (2) iteratively for any value of
T_A.
10 EF4442
2112A–HIREL–11/02