TH58100FT Datasheet, PDF (42/43 Pages) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TH58100FT
(15) Failure phenomena for Program and Erase operations
The device may fail during a Program or Erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
FAILURE MODE
Block
Page
Single Bit
Erase Failure
Programming
Failure
Programming
Failure
1®0
DETECTION AND COUNTERMEASURE SEQUENCE
Status Read after Erase ® Block Replacement
Status Read after Program ® Block Replacement
(1) Block Verify after Program ® Retry
(2) ECC
· ECC: Error Correction Code
· Block Replacement
Program
Error occurs
Buffer
memory
Block A
Block B
When an error happens in Block A, try to
reprogram the data into another Block (Block B)
by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
Figure 28.
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
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