TH58100FT Datasheet, PDF(32/43 Page) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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TH58100FT Datasheet, PDF (32/43 Pages) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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TH58100FT

ID Read (1)

The device contains ID codes which identify the device type and the manufacturer.

The device has 2 types of ID read command, i.e. ID Read (1) command 90H and ID Read (2) command 91H.

ID Read (1) command 90H provides maker code and device code. The ID codes can be read out under the

following timing conditions:

CLE

tCR

ALE

tAR1

I/O

90H

tREAID

98H

79H

ID Read command (1) Address

Maker code

Device code

For the specifications of the acce0s0s times tREAID, tCR and tAR1 refer to the AC Characteristics.

Figure 13. ID Read timing

Table 6. ID Codes read out by ID read command (1) 90H

I/O8

I/O7

I/O6

I/O5

I/O4

I/O3

I/O2

I/O1

Maker code

Device code

Hex Data

98H

79H

2001-03-05 32/43

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