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TH58100FT Datasheet, PDF (20/43 Pages) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TH58100FT
PIN FUNCTIONS
The device is a serial access memory which utilizes time-sharing input of address information. The device pin-outs
are configured as shown in Figure 1.
Command Latch Enable: CLE
NC 1
NC 2
The CLE input signal is used to control loading of the
NC 3
NC 4
operation mode command into the internal command
NC 5
GND 6
register. The command is latched into the command RY/BY 7
register from the I/O port on the rising edge of the WE
RE 8
CE 9
signal while CLE is High.
NC 10
NC 11
VCC 12
Address Latch Enable: ALE
VSS 13
NC 14
The ALE signal is used to control loading of either
NC 15
CLE 16
address information or input data into the internal
address/data register.
ALE 17
WE 18
WP 19
Address information is latched on the rising edge of
NC 20
NC 21
WE if ALE is High.
Input data is latched if ALE is Low.
NC 22
NC 23
NC 24
48 NC
47 NC
46 NC
45 NC
44 I/O8
43 I/O7
42 I/O6
41 I/O5
40 NC
39 NC
38 NC
37 VCC
36 VSS
35 NC
34 NC
33 NC
32 I/O4
31 I/O3
30 I/O2
29 I/O1
28 NC
27 NC
26 NC
25 NC
Chip Enable: CE
Figure 1. Pinout
The device goes into a low-power Standby mode when CE goes High during a Read operation. The CE
signal is ignored when device is in Busy state ( RY/BY = L), such as during a Program or Erase operation, and
will not enter Standby mode even if the CE input goes High. The CE signal must stay Low during the Read
mode Busy state to ensure that memory array data is correctly transferred to the data register.
Write Enable: WE
The WE signal is used to control the acquisition of data from the I/O port.
Read Enable: RE
The RE signal controls serial data output. Data is available tREA after the falling edge of RE .
The internal column address counter is also incremented (Address = Address + l) on this falling edge.
I/O Port: I/O1 to 8
The I/O1 to 8 pins are used as a port for transferring address, command and input/output data to and from the
device.
Write Protect: WP
The WP signal is used to protect the device from accidental programming or erasing. The internal voltage
regulator is reset when WP is Low. This signal is usually used for protecting the data during the power-on/off
sequence when input signals are invalid.
Ready/Busy: RY/BY
The RY/BY output signal is used to indicate the operating condition of the device. The RY/BY signal is in
Busy state ( RY/BY = L) during the Program, Erase and Read operations and will return to Ready state
( RY/BY = H) after completion of the operation. The output buffer for this signal is an open drain.
2001-03-05 20/43