TH58100FT Datasheet, PDF (28/43 Pages) Toshiba Semiconductor – TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

TH58100FT
Starting the above operation from 1st page of the selected erase blocks, and then repeating the operation total
31 times with incrementing the page address in the blocks, and then input the last page data of the blocks, “10H”
command executes final programming.
In this full sequence, the command sequence is following.
1st 80
80
11
80
11
80
11
80
15
11
80
11
80
11
80
15
31st 80
32nd 80
11
80
11
80
11
80
15
11
80
11
80
11
80
10
After the “10H” command, the total results of the above operation is shown through the Status Read command.
Pass
10
71
I/O
Status Read
Fail
command
RY/BY
The Status discription is following.
STATUS
OUTPUT
I/O1 describes total Pass/Fail condition.
I/O1
Total Pass/Fail
Pass: 0
Fail: 1
If at least one fail occurred in 32 times ´ 4
I/O2
District 0 Pass/Fail
Pass: 0
Fail: 1
(512 + 16 byte) page write operation, it
shows “Fail” condition.
I/O3
District 1 Pass/Fail
Pass: 0
I/O4
District 2 Pass/Fail
Pass: 0
Fail: 1
Fail: 1
I/O2 describes total Pass/Fail condition.
If more than one fail occurred in 32 times ´
I/O5
District 3 Pass/Fail
Pass: 0
Fail: 1
1 (512 + 16 byte) page write operation in
District 0 area, it shows “Fail” condition.
I/O6
Not Used
Do not care
I/O3, I/O4 and I/O5 are as same manner
I/O7
Ready/Busy
Ready: 1
Busy: 0
as I/O2.
I/O8
Write Protect
Protect: 0
Not Protect: 1
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