BQ25600 Datasheet, PDF (9/66 Pages) Texas Instruments – I2C Controlled 3.0-A, Single Cell Battery Charger With up-to 40-V Overvoltage Protection Controller for High-Input Voltage and Narrow Voltage DC (NVDC) Power Path Management

www.ti.com
bq25600, bq25600D
SLUSCJ4 – JUNE 2017
Electrical Characteristics (continued)
V_{VAC_UVLOZ} < V_VAC < V_{VAC_OV} and V_VAC > V_BAT + V_SLEEP, T_J = –40°C to 125°C and T_J = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
V_{VAC_OV_RISE}
VAC 6.5-V Overvoltage rising
threshold
VAC rising; OVP (REG06[7:6]) = '01'
6.1
6.42
6.75
V_{VAC_OV_RISE}
VAC 10.5-V Overvoltage rising
threshold
VAC rising, OVP (REG06[7:6]) = '10'
10.35
11
11.5
V_{VAC_OV_RISE}
VAC 14-V Overvoltage rising
threshold
VAC rising, OVP (REG06[7:6]) = '11'
13.5
14.2
15
V_{VAC_OV_HYS}
VAC 6.5-V Overvoltage hysteresis
VAC falling, OVP (REG06[7:6]) =
'01'
130
V_{VAC_OV_HYS}
VAC 10.5-V Overvoltage hysteresis
VAC falling, OVP (REG06[7:6]) =
'10'
250
V_{VAC_OV_HYS}
V_{BAT_UVLOZ}
V_{BAT_DPL_FALL}
V_{BAT_DPL_RISE}
V_{BAT_DPL_HYST}
V_{BUSMIN_FALL}
VAC 14-V Overvoltage hysteresis
BAT for active I²C, no adapter
Battery Depletion Threshold
Battery Depletion Threshold
Battery Depletion rising hysteresis
Bad adapter detection falling
threshold
VAC falling, OVP (REG06[7:6]) =
'11'
V_BAT rising
V_BAT falling
V_BAT rising
V_BAT rising
V_BUS falling
300
2.5
2.18
2.62
2.34
2.86
180
3.68
3.8
3.9
V_{BUSMIN_HYST} Bad adapter detection hysteresis
180
I_BADSRC
Bad adapter detection current
source
Sink current from VBUS to GND
30
POWER-PATH
V_{SYS_MIN}
System regulation voltage
V_VBAT < SYS_MIN[2:0] = 101,
BATFET Disabled (REG07[5] = 1)
3.5
3.68
V_SYS
System Regulation Voltage
I_SYS = 0 A, V_VBAT > V_SYSMIN, V_VBAT
= 4.400 V, BATFET disabled
(REG07[5] = 1)
V_BAT +
50 mV
V_{SYS_MAX}
R_ON(RBFET)
Maximum DC system voltage output
I_SYS = 0 A, , Q4 off, V_VBAT≤ 4.400 V,
V_VBAT > V_SYSMIN = 3.5V
Top reverse blocking MOSFET on-
resistance between VBUS and PMID -40°C≤ T_A ≤ 125°C
- Q1
4.4
4.45
4.48
35
Top switching MOSFET on-
R_ON(HSFET)
resistance between PMID and SW - V_REGN = 5 V , -40°C≤ T_A ≤ 125°C
55
Q2
Bottom switching MOSFET on-
R_ON(LSFET)
resistance between SW and GND - V_REGN = 5 V , -40°C≤ T_A ≤ 125°C
60
Q3
V_FWD
BATFET forward voltage in
supplement mode
30
R_ON(BAT-SYS)
SYS-BAT MOSFET on-resistance
QFN package, Measured from BAT
to SYS, V_BAT = 4.2V, T_J = –40 -
125°C
19.5
BATTERY CHARGER
V_{BATREG_RANGE}
V_{BATREG_STEP}
Charge voltage program range
Charge voltage step
V_BATREG
Charge voltage setting
V_{BATREG_ACC}
Charge voltage setting accuracy
I_{CHG_REG_RANGE} Charge current regulation range
VREG (REG04[7:3]) = 4.208 V
(01011), V, –40 ≤ T_J ≤ 85°C
VREG (REG04[7:3]) = 4.352 V
(01111), V, –40 ≤ T_J ≤ 85°C
V_BAT = 4.208 V or V_BAT = 4.352 V,
–40 ≤ T_J ≤ 85°C
3.856
4.187
4.330
–0.5%
0
32
4.208
4.352
4.624
4.229
4.374
0.5%
3000
UNIT
V
V
V
mV
mV
mV
V
V
V
mV
V
mV
mA
V
V
V
mΩ
mΩ
mΩ
mV
mΩ
V
mV
V
V
mA
Copyright © 2017, Texas Instruments Incorporated
Product Folder Links: bq25600 bq25600D
Submit Documentation Feedback
9