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BQ25600 Datasheet, PDF (12/66 Pages) Texas Instruments – I2C Controlled 3.0-A, Single Cell Battery Charger With up-to 40-V Overvoltage Protection Controller for High-Input Voltage and Narrow Voltage DC (NVDC) Power Path Management
bq25600, bq25600D
SLUSCJ4 – JUNE 2017
www.ti.com
Electrical Characteristics (continued)
VVAC_UVLOZ < VVAC < VVAC_OV and VVAC > VBAT + VSLEEP, TJ = –40°C to 125°C and TJ = 25°C for typical values (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
CHARGE OVERCURRENT COMPARATOR (CYCLE-BY-CYCLE)
IBATFET_OCP
System over load threshold
6.0
PWM
fSW
PWM switching frequency
DMAX
Maximum PWM duty cycle(1)
BOOST MODE OPERATION
Oscillator frequency, buck mode
Oscillator frequency, boost mode
1320
1150
1500
1412
97%
1680
1660
VOTG_REG
Boost mode regulation voltage
VVBAT = 3.8 V, I(PMID) = 0 A,
BOOSTV[1:0] = '10' = 5.15 V
4.972
5.126
5.280
VOTG_REG_ACC
Boost mode regulation voltage
accuracy
VVBAT = 3.8 V, I(PMID) = 0 A,
BOOSTV[1:0] = '10' = 5.15 V
-3
3
VVBAT falling, MIN_VBAT_SEL
(REG01[0]) = 0
2.6
2.8
2.9
VBATLOWV_OTG
Battery voltage exiting boost mode
VVBAT rising, MIN_VBAT_SEL
(REG01[0]) = 0
VVBAT falling, MIN_VBAT_SEL
(REG01[0]) = 1
2.9
3.0
3.15
2.4
2.5
2.6
VVBAT rising, MIN_VBAT_SEL
(REG01[0]) = 1
2.7
2.8
2.9
IOTG
IOTG_OCP_ACC
OTG mode output current
Boost mode RBFET over-current
protection accuracy
BOOST_LIM (REG02[7]) = 1
BOOST_LIM = 0.5 A (REG02[7] = 0)
1.16
0.5
1.4
1.6
0.73
VOTG_OVP
IOTG_HSZCP
OTG overvoltage threshold
HSFET under current falling
threshold
Rising threshold
5.55
5.8
6.15
100
REGN LDO
VREGN
REGN LDO output voltage
VVBUS = 9V, IREGN = 40mA
VREGN
REGN LDO output voltage
VVBUS = 5V, IREGN = 20mA
LOGIC I/O PIN CHARACTERISTICS (CE, PSEL, SCL, SDA,, INT)
5.6
6
6.65
4.58
4.7
4.8
VILO
Input low threshold CE
VIH
Input high threshold CE
IBIAS
High-level leakage current CE
VILO
Input low threshold PSEL
VIH
Input high threshold PSEL
IBIAS
High-level leakage current PSEL
LOGIC I/O PIN CHARACTERISTICS (PG, STAT)
Pull up rail 1.8 V
Pull up rail 1.8V
0.4
1.3
1
0.4
1.3
1
VOL
Low-level output voltage
0.4
D+/D– DETECTION
VD+_1P2
D+ Threshold for Non-standard
adapter (combined V1P2_VTH_LO
and V1P2_VTH_HI)
1.05
1.35
ID+_LKG
VD–_600MVSRC
ID–_100UAISNK
RD–_19K
VD–_0P325
Leakage current into D+
HiZ
Voltage source (600 mV)
D– current sink (100 µA)
D– resistor to ground (19 kΩ)
D– comparator threshold for primary
detection
VD– = 500 mV,
VD– = 500 mV,
D– pin Rising
-1
500
50
14.25
250
1
600
700
100
150
24.8
400
UNIT
A
kHz
kHz
V
%
V
V
V
V
A
A
V
mA
V
V
V
V
µA
V
V
µA
V
V
µA
mV
µA
kΩ
mV
(1) Specified by design. Not production tested.
12
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